器件名称: SB157/106C015-20-W-Ag/Al
功能描述: Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF.
文件大小: 156.75KB 共1页
简 介:SB157/106C015-20-W-Ag/Al
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF.
Data Sheet
Features
Oxide Passivated Junction Very Low Forward Voltage 125 C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)
Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al (Suffix Al).
Anode
Cathode
Ti-Ni-Ag
Symbol
Electrical Characteristics @ 25 C
Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage @ IF = 20A (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current @ VR = 15V (2) Reverse Leakage Current @ VR = 15V, 125 C (2)
O
Symbol Unit
VRRM VF IF(AV) IR(1) IR(2) VESD(mm) TJ TSG Volt Volt Amp
SB157/106C015-20-W-Ag/Al (See ordering code below)
15 0.37 20 15 500 >1000 -45 to +125 -45 to +125 e.g.
mA mA
Volt C C
ESD Machine Model (MM) Junction Operating Temperature Range (2) Storage Temperature Range (2)
(1) Pulse Width tp = < 300S, Duty Cycle <2% (2) The characteristics above assume the die are assembled in industry standard packages using appropriate attach methods.
Ordering Code
SB065C040-3-W-Ag
Schottky Barrier
65 Mils
CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag
Mechanical Dimensions Wafer Die
Wafer Diameter - 100 mm (4") Wafer Thickness 420 +/- 20 Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag") or Cr-Al (Suffix Al). Bottom (cathode) Ti/Ni/Ag Scribe line Width 80 M
99 (2.520)
106 (2.700)
150 (3.820)
157 (4.000)
420 +/- 20 m
Third Angle Protection
The information in this datasheet does not form part o……
