器件名称: TC1NxxxxTR
功能描述: 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes
文件大小: 509.33KB 共6页
简 介:
TAK CHEONG
SEM ICONDUCTOR
500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes
AXIAL LEAD DO35
Absolute Maximum Ratings
Symbol PD TSTG TJ WIV IO IFM IFSURGE Power Dissipation
TA = 25°C unless otherwise noted Value 500 -65 to +200 +175 75 150 450 2 Units mW °C °C V mA mA A
L TC1Nxxxx DEVICE MARKING DIAGRAM
Parameter
Storage Temperature Range Operating Junction Temperature Working Inverse Voltage Average Rectified Current Non-repetitive Peak Forward Current Peak Forward Surge Current
L xx xx
: Logo : Device Code
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS) DO-35 Package (JEDEC) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All external surfaces are corrosion resistant and leads are readily solderable Cathode indicated by polarity band
ELECTRICAL SYMBOL Cathode Anode
Electrical Characteristics
Symbol BV Breakdown Voltage
TA = 25°C unless otherwise noted Parameter Test Condition IR=100A IR=5A Limits Min 100 75 25 5 0.62 0.72 1.0 1.0 Volts Max Unit
Volts nA A
IR
Reverse Leakage Current
VR=20V VR=75V
VF
Forward Voltage
TC1N4448, TC1N914B TC1N4148, TC1N4148 TC1N4448, TC1N914B
IF=5mA IF=10mA IF=100mA IF=IR=10mA RL=100 IRR=1mA
TRR
Reverse Recovery Time
4
nS
C
Capacitance
VR=0V, f=1MHZ
4
pF
March 2002 / A Page 1
TAK CHEONG
SEM ICONDUCTOR Typical Characteristics
I
(mA)
Electrical Symbol Defi……
