器件名称: SB1H100
功能描述: High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
文件大小: 94.41KB 共4页
简 介:New Product
SB1H90 & SB1H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES High barrier technology for improved high TJ Guardring for overvoltage protection Low power losses and high efficiency Low forward voltage drop Very low leakage current High forward surge capability
DO-204AL (DO-41)
High frequency operation Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in middle voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications.
1.0 A 90 V, 100 V 50 A 0.62 V 1.0 A 175 °C
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF IR TJ max.
MECHANICAL DATA Case: DO-204AL (DO-41) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz Maximum operating junction temperature St……
