器件名称: SB10150DC-T3
功能描述: 10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
文件大小: 47.71KB 共4页
简 介:WTE
POWER SEMICONDUCTORS
SB10150DC
Pb
10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
! ! Schottky Barrier Chip C J Guard Ring Die Construction for A Transient Protection ! Low Forward Voltage Drop ! Low Power Loss, High Efficiency B ! High Surge Current Capability D E PIN 1 2 3 ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity G Protection Applications H K P P
D2 PAK/TO-263 Dim Min Max 9.80 10.40 A 9.60 10.60 B 4.40 4.80 C 8.50 9.10 D 2.80 — E 1.00 1.40 G — 0.90 H 1.20 1.40 J 0.30 0.70 K 2.35 2.75 P All Dimensions in mm
Mechanical Data
! ! ! ! ! ! ! Case: D2PAK/TO-263, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 1.7 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4
PIN 1 PIN 3 -
+ Case, PIN 2
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 100°C
Symbol VRRM VRWM VR VR(RMS) IO
SB10150DC
Unit
150 105 10
V V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rate……
