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1N5926B

器件名称: 1N5926B
功能描述: GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
文件大小: 49.4KB    共4页
生产厂商: PANJIT
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简  介:DATA SHEET 1N5926B~1N5939B GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE FEATURES Low profile package 1.0(25.4)MIN. 11 to 39 Volts POWER 1.5 Watts DO-41 Unit: inch(mm) Built-in strain relief Low inductance Plastic package has Underwriters Laboratory Flammability Classification 94V-O Both normal and Pb free product are available : Pb free: 98.5% Sn above Normal : 80~95% Sn, 5~20% Pb .034(.86) .028(.71) MECHANICALDATA 1.0(25.4)MIN. .205(5.2) .160(4.1) .107(2.7) .080(2.0) Case: JEDEC DO-41,Molded plastic over passivated junction. Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes positive end (cathode) Standard packing: 52mm tape Weight: 0.012 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. P ar am et er D C P ow erD i ssi pat i on on TA =75 O C , M easur e atZer o Lead Lengt h D er at e above 75O C (N O TE 1) O per at i ng Junct i on and S t or ageTem per at ur e R ange S ym bol Val ue 1. 5 55 t o +150 U ni t s W at t s O PD TJ ,TSTG C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-JUN.23.2004 PAGE . 1 N om i na l Z e ne r V o l t age P ar tN um ber ZT VZ @ I M a xi m um Z e ne r I m p e d a nce Z ZT @ I ZT Z ZK @ I ZK mA 34. 1 31. 2 28. 8 25. 0 23. 4 20. 8 18. 7 17. 0 15. 6 13. 9 12. 5 11. 4 10. 4 9. 6 O hm s 550 550 550 600 600 650 650 650 700 700 750 800 850 900 mA 0. 25 0. 25 0. 25 0. 25 0. 25 0. 25 0. 2……
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