器件名称: RB715Z
功能描述: Schottky barrier diode
文件大小: 220.05KB 共4页
简 介:RB715Z
Diodes
Schottky barrier diode
RB715Z
zApplications General rectification zExternal dimensions (Unit : mm)
1.2±0.1 0.32±0.05 (3) 0.13±0.05
zLand size figure
0.4 0.45
zFeatures 1) Extra small power mold type. (VMD3) 2) Low VF 3) High reliability
0.8±0.1
1.2±0.1
0～0.1
0.4 0.5 0.45
(1) 0.22±0.05 0.4
(2) 0.22±0.05 0.4 0.15Maｘ 0.5±0.05
0.8±0.05
0.8
VMD3
0.5±0.05
0.37
0.15Max
0.2±0.1
0～0.1
ROHM : VMD3 dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.1 0.05 1.75±0.1 0.3±0.1
0.3
zStructure
3.5±0.05
8.0±0.2
1.40±0.1
4.0±0.1
φ1.0±0.2 0
2.8±0.05
2.8±0.1
1.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature
Rating of per diode
Symbol VRM
VR
Limits 40
30
Unit V V mA mA °C °C
IO IFSM Tj Tstg
30 200 125 40 to +125
zElectrical characteristic (Ta=25°C)
Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.37 0.5 Unit V A IF=1mA VR=30V Conditions
1.15
1/3
RB715Z
Diodes
zElectrical characteristic curves
100
FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA)
1000 Ta=125℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 10 1 0.1 0.01 0.001 0 500 1000 1500 0 10 20 30
10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
f=1MHz
10 Ta=75℃
1 Ta=-25℃ 0.1 Ta=25℃ 0.01
1
0.1 0 10 20 30
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV) V……
