器件名称: RB715W
功能描述: Schottky barrier diode
文件大小: 184.25KB 共3页
简 介:RB715W
Diodes
Shottky barrier diode
RB715W
zApplication Low current rectification zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability.
(2) 0.5 0.5 1.0±0.1
zExternal dimensions (Unit : mm)
zLead size figure (Unit : mm)
1.0 0.5 0.5
1.6±0.2 0.3±0.1 0.05 (3) 0.15±0.05
0.7
0.7
0.8±0.1 1.6±0.2
0.7
0～0.1 0.1Min
EMD3
0.6
0.6
0.2±0.1 -0.05
(1) 0.55±0.1 0.7±0.1
zConstruction Silicon epitaxial planer
zStructure
ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.1 0 1.75±0.1 0.3±0.1
3.5±0.05
1.8±0.2
5.5±0.2
1.8±0.1
φ0.5±0.1
0～0.1
8.0±0.2
0.9±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz·1cyc) (*1) Junction temperature Storage temperature (*1)Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 200 125 -40 to +125 Unit V V mA mA ℃ ℃
zElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Capacitance between terminals Ct
Min. -
Typ. 2.0
Max. 0.37 1 -
Unit V A pF
Conditions IF=1mA VR=10V VR=1.0V f=1.0MHz
Rev.B
1.3
1/3
RB715W
Diodes
zElectrical characteristic curves (Ta=25°C)
100 Ta=125℃ 1000 Ta=125℃ 10 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10
Ta=75℃
10 1 0.1
Ta=75℃
1
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
Ta=-25℃
Ta=25℃ Ta=-25℃
1
0.1
Ta=25℃
0.01 0……
