器件名称: TP2522
功能描述: P-Channel Enhancement-Mode Vertical DMOS FETs
文件大小: 456.52KB 共4页
简 介:TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS -200V -220V * Same as SOT-89.
RDS(ON) (max) 12 12
VGS(th) (max) -2.4V -2.4V
ID(ON) (min) -0.75A -0.75A
Order Number / Package TO-243AA* TP2520N8 TP2522N8 Die — TP2522ND
Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Product marking for TO-243AA
Features
Low threshold — -2.4V max. High input impedance Low input capacitance — 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
TP5C
Where = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS Solid ……
