器件名称: ST1413AC
功能描述: P Channel Enhancement Mode MOSFET
文件大小: 138.95KB 共7页
简 介:P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION
ST1413AC
The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOD-353 (SC-70) FEATURE z -20V/-3.4A, RDS(ON) = 130m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 150m-ohm @VGS = -2.5V z - 20V/-1.7A, RDS(ON) = 190m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-353 (SC-70) package design
D D
D
S G
1.4.5.Drain
2.Gate
3.Source
1AYW
1A : Part Marking Y : Year Code W : Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 1
P Channel Enhancement Mode MOSFET -3.4A
ST1413AC
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Amb……