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1N5817M

器件名称: 1N5817M
功能描述: 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
文件大小: 59.09KB    共2页
生产厂商: DIODES
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简  介:1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features High Current Capability Low Forward Voltage Drop Guard Ring for Transient Protection Glass Package for High Reliability Packaged for Surface Mount Applications C A B Mechanical Data Case: MELF, Glass Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode band Approx Weight: 0.25 gram Mounting Position: Any Dim A B C MELF Min 4.80 2.40 Max 5.20 2.60 0.55 Nominal All Dimensions in mm Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Maximum Average Forward Rectified Current @TT = 90°C (Note 1) Maximum Forward Surge Current. Half Cycle @60Hz Superimposed on rated load, JEDEC Method Maximum Forward Voltage Drop @ IF = 1.0A @ IF = 3.0A Symbol VRRM VRWM VR VR(RMS) IO IFSM VF @ TA = 25°C unless otherwise specified 1N5817M 20 14 1N5818M 30 21 1.0 25 0.450 0.750 0.550 0.875 1.0 10 130 110 -60 to +125 0.600 0.900 1N5819M 40 28 Units V V A A V Maximum Reverse Leakage Current @ VRRM @ TA = 25°C @ TA = 100°C Typical Thermal Resistance, Junction to Ambient (Note 1) Typical Junction Capacitance (Note 2) Storage and Operating Temperature Range Notes: IR RqJA Cj Tj, TSTG mA K/W pF °C 1. Valid provided that terminals are kept at ambient temperature. 2. Measured at VR = 4.0V, f = 1.0MHz. DS13001 Rev. D-2 1 of 2 1N5817M/1N5818M/1N5819M IF, NSTANTANEOUS FORWARD CURRE……
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1N5817M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER DIODES
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