器件名称: MUN5231DW1T1G
功能描述: Dual Bias Resistor Transistors
文件大小: 139.52KB 共21页
简 介:MUN5211DW1T1 Series
Preferred Devices
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium.
Features http://onsemi.com
(3) R1 Q1
(2) R2
(1)
Q2 R2 (4) R1 (5) (6)
Simplifies Circuit Design Reduces Board Space Reduces Component Count PbFree Packages are Available
6 1
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
SOT363 CASE 419B STYLE 1
MARKING DIAGRAM
6 xx M G G 1 xx = Device Code M = Date Code* G = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated)……
