器件名称: 1N5811US
功能描述: Superfast Recovery Diodes Surface Mount (US)
文件大小: 110.17KB 共2页
简 介:1N5807US/1N5809US/1N5811US
POWER DISCRETES Description
Quick reference data VR 50 -150 V IF 1N5807US to 1N5811US = 6A trr 1N5807US to 1N5811US = 30nS IR 1N5807US to 1N5811US = 5A
Superfast Recovery Diodes Surface Mount (US)
Features
Very low reverse recovery time Hermetically sealed non-cavity construction Soft, non-snap, off recovery characteristics Very low forward voltage drop
These products are qualified to MIL-PRF-19500/477 and are preferred parts as listed in MIL-HDBK-5961. They can be supplied fully released as JANTX and JANTXV versions.
Electrical Specifications
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol Working Reverse Voltage Repetitive Reverse Voltage Average Forward Current (@ 75°C lead length = 0.375') Repetitive Surge Current (@ 55°C in free air lead length = 0.375') Non-Repetitive Surge Current (tp = 8.3mS @ Vr & TJMAX) Storage Temperature Range Average Forward Current Max (pcb mounted: TA = 55°C) Sine wave Square wave (d = 0.5) I2t for fusing (t = 8.3mS) max Forward Voltage Drop max @ TJ = 25°C Reverse Current max @ VWRM, TJ = 25°C @ VWRM, TJ = 100°C Reverse Recovery Time max (1.0A IF to 1.0A IRM recover to 0.25A IRM(REC)) Junction Capacitance typ @ VR = 5V f = 1MHz Thermal Resistance to end cap VRWM VRRM IF(AV) IFRM IFSM TSTG
1N 5807U S 50 50
1N 5809U S 100 100 6.0 25 125 -65 to +175
1N5811US 150 150
Units V V A A A °C
IF(AV) IF(AV) I2t VF IR IR trr CJ R θJEC
1.7 1.8 32 0.875 @ 4A
A A 2S V
5.0 150 30 60 6.5
A
n……
