器件名称: MT3S37T
功能描述: VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
文件大小: 125.76KB 共4页
简 介:MT3S37T
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S37T
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e| =12.0dB (@f=2GHz)
2
Marking
3
Q4
1 2
TESM JEDEC JEITA
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 50 25 100 150 55~150 Unit V V V mA mA mW °C °C
Maximum Ratings (Ta = 25°C)
― ― 2-1B1A
TOSHIBA
Weight:0.0022g (typ.)
1
2002-08-19
MT3S37T
Microwave Characteristics (Ta = 25°C)
Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2)
2 2
Test Condition VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=3V, IC=20mA, f=2GHz VCE=3V, IC=3mA, f=1GHz VCE=3V, IC=3mA, f=2GHz
Min 15 15 10 -
Typ. 19 17 12 0.9 1.2
Max 1.8
Unit GHz dB dB dB dB
Noise Figure
Electrical Characteristics (Ta = 25°C)
Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=20mA VCB=1V, IE=0, f=1MHz VCB=1V, IE=0, f=1MHz (Note 1) Min 70 Typ. 0.66 0.35 Max 1 1 140 1.0 0.65 Unit A A pF pF
Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic disc……
