器件名称: MSD601-ST1
功能描述: NPN General Purpose Amplifier Transistors Surface Mount
文件大小: 110.85KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSD601–RT1/D
NPN General Purpose Amplifier Transistors Surface Mount
COLLECTOR 3
MSD601-RT1* MSD601-ST1
*Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc
3 2 1
CASE 318D–03, STYLE 1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. MSD601–RT1 MSD601–ST1 Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 — — 210 290 90 — Max — — — 0.1 100 340 460 — 0.5 Vdc Unit Vdc Vdc Vdc Adc nAdc —
DEVICE MARKING Marking Symbol
YRX
MSD601–RT1
YSX
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code i……
