器件名称: MSC2295-CT1G
功能描述: NPN RF Amplifier Transistors Surface Mount
文件大小: 41.32KB 共2页
简 介:MSC2295BT1, MSC2295CT1
Preferred Device
NPN RF Amplifier Transistors Surface Mount
Features
PbFree Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc
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COLLECTOR 3
2 BASE
1 EMITTER
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to +150 Unit mW °C °C
2 1 3
SC59 CASE 318D
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic CollectorBase Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain (Note 1) (VCB = 10 Vdc, IC = 1.0 mAdc) MSC2295BT1 MSC2295CT1 CollectorGain — Bandwidth Product (VCB = 10 Vdc, IE = 1.0 mAdc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) Symbol ICBO hFE 70 110 fT 150 Cre 1.5 pF Device MSC2295BT1 MSC2295BT1G MSC2295CT1 MSC2295CT1G 140 220 MHz 0.1 Min Max Unit mAdc
Vx M G G
= Device Code x= B or C M = Date Code* G = PbFree Package (Note: Microdot may be in either location) *Date Code orienta……
