器件名称: MSASC75W45FR
功能描述: LOW LEAKAGE CURRENT SCHOTTKY DIODE
文件大小: 88.81KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6819
(MSASC75W45F)
Features
Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6819) and reverse polarity (strap is cathode: 1N6819R)
PRELIMINARY
1N6819R
45 Volts 75 Amps
SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC MAX. 45 45 45 75 4 500 2 -55 to +150 -55 to +150 0.50 0.65
(MSASC75W45FR)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 125° C derating, forward current, Tc≥ 125° C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6819 1N6819R
LOW LEAKAGE CURRENT SCHOTTKY DIODE
UNIT Volts Volts Volts Amps Amps/° C Amps Amp ° C ° C ° C/W
Mechanical Outline
ThinKey 4
Datasheet# MSC1030A
1N6819 (MSASC75W45F) 1N6819R (MSASC75W45FR)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR125-1 IR125-2 IR125 VF1……