器件名称: MSASC75W100F
功能描述: LOW REVERSE LEAKAGE SCHOTTKY DIODE
文件大小: 88.02KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6820
(MSASC75W100F)
Features
Tungsten schottky barrier for low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6820) and reverse polarity (strap is cathode: 1N6820R)
PRELIMINARY
1N6820R
100 Volts 75 Amps
SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC MAX. 45 45 45 75 4 500 2 -55 to +150 -55 to +150 0.50 0.65
(MSASC75W100FR)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 125° C derating, forward current, Tc≥ 125° C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6820 1N6820R
LOW REVERSE LEAKAGE SCHOTTKY DIODE
UNIT Volts Volts Volts Amps Amps/° C Amps Amp ° C ° C ° C/W
Mechanical Outline
ThinKey 4
Datasheet# MSC1031A
1N6820 (MSASC75W100F) 1N6820R (MSASC75W100FR)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR125-1 I……