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MSASC75H45FR

器件名称: MSASC75H45FR
功能描述: LOW VOLTAGE DROP SCHOTTKY DIODE
文件大小: 88.48KB    共2页
生产厂商: MICROSEMI
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简  介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 1N6818 (MSASC75H45F) Features Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6818) and reverse polarity (strap is cathode: 1N6818R) PRELIMINARY 1N6818R 45 Volts 75 Amps SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC MAX. 45 45 45 75 4 500 2 -55 to +150 -55 to +150 0.50 0.65 (MSASC75H45FR) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 125° C derating, forward current, Tc≥ 125° C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6818 1N6818R LOW VOLTAGE DROP SCHOTTKY DIODE UNIT Volts Volts Volts Amps Amps/° C Amps Amp ° C ° C ° C/W Mechanical Outline ThinKey 4 Datasheet# MSC1029A 1N6818 (MSASC75H45F) 1N6818R (MSASC75H45FR) Electrical Parameters DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR1……
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MSASC75H45FR LOW VOLTAGE DROP SCHOTTKY DIODE MICROSEMI
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