器件名称: MSASC25W100KR
功能描述: LOW REVERSE LEAKAGE SCHOTTKY DIODE
文件大小: 140.81KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6817
(MSASC25W100K)
Features
1N6817R
(MSASC25W100KR)
100 Volts 25 Amps LOW REVERSE LEAKAGE SCHOTTKY DIODE
MAX.
100 100 100 25 (3.3) 120 2 -55 to +175 -55 to +175 1.25 1.35
Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6817) and reverse polarity (strap is cathode: 1N6817R) TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS) screening i.a.w. Microsemi internal procedure PS11.50 available
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 145°C derating, forward current, Tc≥ 145°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6817 1N6817R
SYMBOL
VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC
UNIT
Volts Volts Volts Amps Amps/°C Amps Amp °C °C °C/W
Mechanical Outline
ThinKey2
Datasheet# MSC1034B August, 2000
1N6817
(MSASC25W100K)
1N6817R
(MSASC25W100KR)
Electrical Parameters
DESCRIPTION Reve……
