器件名称: MSASC150W45LR
功能描述: LOW LEAKAGE SCHOTTKY DIODE
文件大小: 72.24KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6822
(MSASC150W45L)
Features
Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6822) and reverse polarity (strap is cathode: 1N6822R)
1N6822R
45 Volts 150 Amps LOW LEAKAGE SCHOTTKY DIODE
MAX. 45 45 45 150 4 750 2 -55 to +150 -55 to +150 0.20 0.35 UNIT Volts Volts Volts Amps Amps/° C Amps Amp ° C ° C ° C/W
(MSASC150W45LR)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 125° C derating, forward current, Tc≥ 125° C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6822 1N6822R SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC
Mechanical Outline
ThinKey 3
Datasheet# MSC1036A
1N6822 (MSASC150W45L) 1N6822R (MSASC150W45LR)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR100 IR125 VF1 VF2 VF3 VF4 VF5 ……
