器件名称: MSASC150H45LR
功能描述: LOW VOLTAGE DROP SCHOTTKY DIODE
文件大小: 86.9KB 共3页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
1N6821
(MSASC150H45L)
Features
Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, 1N6821) and reverse polarity (strap-to-cathode: 1N6821R)
1N6821R
45 Volts 150 Amps LOW VOLTAGE DROP SCHOTTKY DIODE
MAX. 45 45 45 150 4 750 2 -55 to +150 -55 to +150 0.20 0.35 UNIT Volts Volts Volts Amps Amps/° C Amps Amp ° C ° C ° C/W
(MSASC150H45LR)
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 125° C derating, forward current, Tc≥ 125° C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6821 1N6821R SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC
Mechanical Outline
ThinKey 3
Datasheet# MSC1035A
1N6821 (MSASC150H45L) 1N6821R (MSASC150H45LR)
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR100 IR125 VF1 VF2 VF3 VF4……
