器件名称: MSASC150H45A
功能描述: LOW VOLTAGE DROP SCHOTTKY DIODE
文件大小: 36.73KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSASC150H45A
45 Volts 150 Amps
Features
Platinum/Tungsten schottky barrier for low forward voltage drop Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS) screening i.a.w. Microsemi Internal Procedure PS 11.50 available
LOW VOLTAGE DROP SCHOTTKY DIODE
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C derating, forward current, Tc≥ 135°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1 s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC MAX. 45 45 45 150 (3.75) 500 2 -65 to +175 -65 to +175 0.25 UNIT Volts Volts Volts Amps Amps/°C Amps Amp °C °C °C/W
Mechanical Outline
Datasheet# MSC0876.PDF
MSASC150H50A
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR100 IR125 VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 VF10 Cj1 Cj2 BVR CONDITIONS VR=……
