器件名称: MSASC100W100H
功能描述: LOW LEAKAGE SCHOTTKY DIODE
文件大小: 47.49KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSASC100W100H MSASC100W100HR
Features
Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, MSASC100W100H) and reverse polarity (strap-to-cathode: MSASC100W100HR)
100 Volts 100 Amps
LOW LEAKAGE SCHOTTKY DIODE
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 135°C derating, forward current, Tc≥ 135°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: MSASC100W100H SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC MAX. 100 100 100 100 2.5 500 2 -65 to +175 -65 to +175 0.35 0.5 UNIT Volts Volts Volts Amps Amps/°C Amps Amp °C °C °C/W
Mechanical Outline
Datasheet# MSC0306A
MSASC100W100H MSASC100W100HR
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR125 VF1 VF2 VF3 VF4 VF5 VF6 VF7 Cj1 Cj2 BVR CONDITIONS VR= 100 Vdc, Tc……
