器件名称: MSASC100H45HR
功能描述: SURFACE MOUNT LOW VOLTAGE DROP SCHOTTKY DIODE
文件大小: 47.65KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSASC100H45H MSASC100H45HR
Features
Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, MSASC100H45H) and reverse polarity (strap-to-cathode: MSASC100H45HR)
45 Volts 100 Amps
SURFACE MOUNT LOW VOLTAGE DROP SCHOTTKY DIODE
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 125°C derating, forward current, Tc≥ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: MSASC100H45H MSASC100H45HR SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC MAX. 45 45 45 100 4 500 2 -65 to +150 -65 to +150 0.35 0.5 UNIT Volts Volts Volts Amps Amps/°C Amps Amp °C °C °C/W
Mechanical Outline
Datasheet# MSC0292A
MSASC100H45H MSASC100H45HR
Electrical Parameters
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c≤ 2% SYMBOL IR25 IR125 VF1 VF2 VF3 VF4 VF5 VF6 VF7 Cj1 Cj2 B……
