器件名称: MSAGA11F120D
功能描述: Fast IGBT Die for Implantable Cardio Defibrillator Applications
文件大小: 221.23KB 共3页
简 介:2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989
MSAGA11F120D
Fast IGBT Die for Implantable Cardio Defibrillator Applications
DESCRIPTION:
N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
Surge Current (ICM) - Amps
55
10s x 4ms double exponential
FEATURES:
Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix
35-50% of ICM Max
10s
4000 s
MAXIMUM RATINGS:
SYMBOL
VCES VCGR VEG VGE IC1 IC2 ICM ICM1 ICM2 ICsurge2 EAS PD TJ, TSTG
Time - sec
PARAMETER
Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20K ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25° C Continuous Collector Current @ TC = 110° C Surge Current (10s x 4ms double exponential, see figure 2) Pulsed Collector Current @ TC = 25° C Pulsed Collector Current @ TC = 110° C Surge Current: tp= 2 us (ton= 1.5 s; toff= 0.5 s to 50% decay), 10 pulses, duty cycle= 1:2,500,000 (12 pulses/minute) Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage: Junction Temperature Range
VALUE
1200 1200 15 ±20 22 11 55 44 22 400 10 125 -55 to 15……
