器件名称: MSAFA1N100D
功能描述: Fast MOSFET Die for Implantable Cardio Defibrillator Applications
文件大小: 78.02KB 共3页
简 介:2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989
MSAFA1N100D
Fast MOSFET Die for Implantable Cardio Defibrillator Applications
DESCRIPTION:
N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq. Switching Ultra Low Leakage Current UIS rated Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix
FEATURES:
MAXIMUM RATINGS:
SYMBOL
VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG
PARAMETER
Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current @ T C = 25° C Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range
VALUE
1000 ±20 1 .8 4 1 TBD TBD -55 to 150
UNIT
Volts Volts Amps Amps Amps Amps mJ mJ °C
STATIC ELECTRICAL CHARACTERISTICS:
SYMBO L BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3 IGSS1 IGSS2 IGSS3 CHARACTERISTIC / TEST CONDITIONS Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA) Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37° C Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25° C Drain – Source On-State Resistance (VGS = 10V, ID = ID1, T J = 25° C) Drain – S……
