器件名称: MSAEX8P50A
功能描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET/FRED
文件大小: 49.32KB 共2页
简 介:2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAEX8P50A
500 Volts 8 Amps 1.2
P-CHANNEL ENHANCEMENT MODE POWER MOSFET/FRED
Features
High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC
DRAIN
MAX. 500 500 +/-20 +/-30 8 5 32 8 30 tbd 5.0 300 -55 to +150 -55 to +150 8 32 0.35
UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 M Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current
100°C
Tj= 25°C Tj=
Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode
@ IS ≤ IDM, di/dt ≤ 100 A/s, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resista……
