器件名称: MSA1162GT1
功能描述: General Purpose Amplifier Transistors
文件大小: 44.22KB 共4页
简 介:MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors
PNP Surface Mount
Moisture Sensitivity Level: 1 ESD Rating: TBD
MAXIMUM RATINGS (TA = 25°C)
Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc 2 BASE 1 EMITTER
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COLLECTOR 3
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to +150 Unit mW °C °C 2 1
MARKING DIAGRAM
3 62x M
SC59 CASE 318D STYLE 1
62 x M
= Specific Device Code = G or Y = Date Code
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
noted) Characteristic CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) CollectorBase Cutoff Current (VCB = 45 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162 YT1 MSA1162GT1 CollectorEmitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Current Gain Bandwidth Product (IC = 1 mA, VCE = 10.0 V, f = 10 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE 120 200 VCE(sat) fT 80 240 400 0.5 Vdc MHz 0.1 2.0 1.0 Min 50 60 7.0 Max 0.1 Unit Vdc ……
