器件名称: MSA-1105-TR1
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 74.79KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1105
Features
High Dynamic Range Cascadable 50 or 75 Gain Block 3 dB Bandwidth: 50 MHz to 1.3 GHz 17.5 dBm Typical P1 dB at 0.5 GHz 3.6 dB Typical Noise Figure at 0.5 GHz Surface Mount Plastic Package Tape-and-Reel Packaging Option Available[1]
Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
Description
The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75 systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems.
05 Plastic Package
The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration
R bias VCC > 8 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5.5 V
2
5965-9557E
6-458
MSA-1105 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 550 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,……
