器件名称: MSA-1100
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 59.57KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1100
Features
High Dynamic Range Cascadable 50 or 75 Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz 17.5 dBm Typical P1dB at 0.5 GHz 12 dB Typical 50 Gain at 0.5 GHz 3.5 dB Typical Noise Figure at 0.5 GHz
combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.
Chip Outline[1]
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Description
The MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for high dynamic range in either 50 or 75 systems by
This chip is intended to be used with an external blocking capacitor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 200 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]
Note: 1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.
Typical Biasing Configuration
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