器件名称: MSA1022CT1
功能描述: PNP RF Amplifier Transistor Surface Mount
文件大小: 107.66KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSA1022–CT1/D
PNP RF Amplifier Transistor Surface Mount
COLLECTOR 3
MSA1022-CT1
Motorola Preferred Device
3 2 1
2 BASE
1 EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCBO VCEO VEBO IC Value – 30 – 20 – 5.0 – 30 Unit Vdc Vdc Vdc mAdc
CASE 318D–03, STYLE 1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector Cutoff Current (VCB = –10 Vdc, IE = 0) Collector–Emitter Breakdown Voltage (VCE = – 20 Vdc, IB = 0) Emitter–Base Breakdown Voltage (VEB = – 5.0 Vdc, IC = 0) DC Current Gain(1) (VCE = –10 Vdc, IC = –1.0 mAdc) Current–Gain — Bandwidth Product (VCB = –10 Vdc, IE = 1.0 mAdc) 1. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. Symbol ICBO ICEO IEBO hFE fT Min — — — 110 150 Max – 0.1 –100 –10 220 — Unit Adc Adc Adc — MHz
DEVICE MARKING
Marking Symbol
ECX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MSA1022–BT1/D)
Motorola, Inc. 1996
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
MSA……
