器件名称: MSA0886
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 52.83KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0886
Features
Usable Gain to 5.5 GHz High Gain: 32.5 dB Typical at 0.1 GHz 22.5 dB Typical at 1.0 GHz Low Noise Figure: 3.3 dB Typical at 1.0 GHz Surface Mount Plastic Package Tape-and-Reel Packaging Option Available[1]
Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
Description
The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment,
86 Plastic Package
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration
R bias VCC > 10 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 7.8 V
2
5965-9547E
6-426
MSA-0886 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to 150°C Thermal……
