器件名称: MSA-0885
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 53.07KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0885
Features
Usable Gain to 6.0 GHz High Gain: 32.5 dB Typical at 0.1 GHz 22.5 dB Typical at 1.0 GHz Low Noise Figure: 3.3 dB Typical at 1.0 GHz Low Cost Plastic Package
purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
85 Plastic Package
Description
The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general
Typical Biasing Configuration
R bias VCC > 10 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 7.8 V
2
5965-9545E
6-422
MSA-0885 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to 150°C Thermal Resistance[2,4]: θjc = 130°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.7 mW/°C for TC……
