器件名称: MSA-0870
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 52.72KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0870
Features
Usable Gain to 6.0 GHz High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz Low Noise Figure: 3.0 dB Typical at 1.0 GHz Hermetic Gold-ceramic Microstrip Package
purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial and military applications.
70 mil Package
Description
The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general
The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration
R bias VCC > 10 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 7.8 V
2
5965-9544E
6-418
MSA-0870 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65°C to 200°C Thermal Resistance[2,4]: θjc = 150°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derat……
