器件名称: MSA-0770
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 52.69KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1120
Features
High Dynamic Range Cascadable 50 or 75 Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz 17.5 dBm Typical P1 dB at 0.5 GHz 12 dB Typical 50 Gain at 0.5 GHz 3.5 dB Typical Noise Figure at 0.5 GHz Hermetic Metal/Beryllia Microstrip Package
disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
200 mil BeO Package
Description
The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO
Typical Biasing Configuration
R bias VCC > 8 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5.5 V
2
5965-9559E
6-466
MSA-1120 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 60°C/W
Notes: 1. Permanent damage may occur if any of t……
