器件名称: MSA-0670
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 52.73KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0670
Features
Cascadable 50 Gain Block Low Operating Voltage: 3.5 V Typical Vd 3 dB Bandwidth: DC to 1.0 GHz High Gain: 19.5 dB Typical at 0.5 GHz Low Noise Figure: 2.8 dB Typical at 0.5 GHz Hermetic Gold-ceramic Microstrip Package
high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
70 mil Package
Description
The MSA-0670 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic,
Typical Biasing Configuration
R bias VCC > 5 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 3.5 V
2
5965-9586E
6-374
MSA-0670 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 130°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.7 mW/°C for TC > 174°C. 4. Th……
