器件名称: MSA-0370
功能描述: Cascadable Silicon Bipolar MMIC Amplifiers
文件大小: 52.15KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifiers Technical Data
MSA-0370
Features
Cascadable 50 Gain Block 3 dB Bandwidth: DC to 2.8 GHz 12.0 dB Typical Gain at 1.0 GHz 10.0 dBm Typical P1 dB at 1.0 GHz Unconditionally Stable (k>1) Hermetic Gold-ceramic Microstrip Package
Description
The MSA-0370 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to
70 mil Package
achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
5965-9569E
6-306
MSA-0370 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 125°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8 mW/°C for TC > 147°C. 4. The small spot size of this tech……
