器件名称: MSA-0335
功能描述: Cascadable Silicon Bipolar MMIC Amplifiers
文件大小: 53.92KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifiers Technical Data
MSA-0335, -0336
Features
Cascadable 50 Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB Typical Gain at 1.0 GHz 10.0 dBm Typical P1 dB at 1.0 GHz Unconditionally Stable (k>1) Cost Effective Ceramic Microstrip Package
designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0336.
35 micro-X Package[1]
Note: 1. Short leaded 36 package available upon request.
Description
The MSA-0335 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
5965-9568E
6-302
MSA-0335, -0336 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 150°C/W
Notes: 1. Permanent dama……
