器件名称: MSA-0270
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 51.8KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0270
Features
Cascadable 50 Gain Block 3 dB Bandwidth: DC to 2.8 GHz 12.0 dB Typical Gain at 1.0 GHz Unconditionally Stable (k>1) Hermetic Gold-ceramic Microstrip Package
MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
70 mil Package
Description
The MSA-0270 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
5965-9698E
6-278
MSA-0270 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 325 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 120°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.3 mW/°C for TC > 161°C. 4. The small spot size of this technique results in a higher, though ……