器件名称: MSA-0204
功能描述: Cascadable Silicon Bipolar MMIC Amplifier
文件大小: 73.58KB 共4页
简 介:Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1000
Features
High Output Power: +27 dBm Typical P1dB at 1.0 GHz Low Distortion: 37 dBm Typical IP3 at 1.0 GHz 8.5 dB Typical Gain at 1.0 GHz Impedance Matched to 25 for Push-Pull Configurations
amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire. This chip is intended to be used with an external blocking capacitor completing the shunt feedback
Chip Outline[1]
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Description
The MSA-1000 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1000 can also be used as single-ended amplifier in a 50 system with slightly reduced performance. Typical applications include narrow and broadband RF
path (closed loop). Data sheet characterization is given for a 80 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]
Note: 1. Refer to the APPLICATIONS section “Silicon MMIC……
