器件名称: MMUN2211
功能描述: Bias Resistor Transistor NPN Silicon
文件大小: 438.62KB 共10页
简 介:MMUN2211 Series
Bias Resistor Transistor NPN Silicon
P b Lead(Pb)-Free
COLLECTOR 3 BASE 1
R1 R2
3 1 2
2 EMITTER
SOT-23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous
Symbol
VCEO VCBO IC
Value
50 50 100
Unit
Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1) TA = 25℃ Derate above 25℃ Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature 1. FR-4 @ minimun pad
Symbol
PD R θJA TJ,Tstg
Value
246 1.6 625 -65 to +150
Unit
mW mW / ℃ ℃/W ℃
Device Marking and Resistor Values
Device
MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231
Marking
A8A A8B A8C A8D A8E A8F A8G A8H
R1(k)
10 22 47 10 10 4.7 1.0 2.2
R2(k)
10 22 47 47
Device
MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241
Marking
A8J A8K A8L A8M A8R A8U
R1(k)
4.7 4.7 22 2.2 2.2 100
R2(k)
4.7 47 47 47
∞ ∞
∞ ∞
1.0 2.2
WEITRON
http://www.weitron.com.tw
1/10
Rev.A 30-Dec-05
MMUN2211 Series
ELECTRICAL CHARACTERISTICS
(TA = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutof f Current (V CB= 50 V , IE = 0) Collector-Emitter Cutoff Current (VCE= 50 V , I B = 0) Emitter-Base Cutof f Current (VEB= 6.0 V, I C = 0)
Symbol
ICBO ICEO IEBO
Min
50 50
Typ
-
Max
100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1 -
Unit
nAdc nAdc mAdc
MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MM……
