器件名称: MMBV2109LT1
功能描述: Silicon Tuning Diode
文件大小: 61.65KB 共3页
简 介:LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance —10% Complete Typical Design Curves
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2106 MV2108 MV2109 MV2111 MV2115
6.8-100p 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
3
3 CATHODE
1 ANODE
1 2
CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE)
Symbol VR IF PD Forward power Dissipation @T A = 25°C Derate above 25°C Junction Temperature TJ Storage Temperature Range T stg Rating Reverse Voltage Forward Current M V 2 1 X X MMBV21XXLT1 Unit 30 Vdc 200 mAdc 280 225 mW 2.8 1.8 mW/°C +150 °C –55 to +150 °C
DEVICE MARKING
MMBV2101LT1=M4G MMBV2103LT1=4H MMBV2105LT1=4U MMBV2107LT1=4W MMBV2108LT1=4X MMBV2109LT1=4J Symbol V (BR)R IR TCC Min 30 — — Typ — — 280 Max — 0.1 — Unit Vdc Adc ppm/°C
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR=1.0Adc) Reverse Voltage Leakage Current (VR=25Vdc,TA=25°C) Diode Capacitance Temperature Coefficient (VR=4.0Vdc,f=1.0MHz)
MMBV2101~MMBV2109 –1/3 MV2101~MV2115
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT……
