器件名称: MMBV2107LT1
功能描述: Silicon Tuning Diode
文件大小: 123.4KB 共3页
简 介:Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for high volumerequirements of FM Radio and TV tuning and AFC, general frequency control andtuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance —10% Complete Typical Design Curves
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
6.8-100p 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
3 CATHODE
1 ANODE
3
1 2
CASE
318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg M V 2 1 X X MMBV21XXLT1 Unit 30 Vdc 200 mAdc 280 225 mW 2.8 1.8 mW/°C +150 °C –55 to +150 °C
DEVICE MARKING
MMBV2101LT1=M4G MMBV2103LT1=4H MMBV2105LT1=4U MMBV2107LT1=4W MMBV2108LT1=4X MMBV2109LT1=4J Symbol V (BR)R IR T CC Min 30 — — Typ — — 280 Max — 0.1 — Unit Vdc Adc ppm/°C
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR=1.0Adc) Reverse Voltage Leakage Current (VR=25Vdc,TA=25°C) Diode Capacitance Temperature Coefficient (VR=4.0Vdc,f=1.0MHz)
I6–1/3
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
C Device V
R
T
, Diode Capacitance = 4.0 Vdc, f = 1.0 MHz pF Min 6.1 9.0 10.8 13.5 ……
