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MMBV2105LT1

器件名称: MMBV2105LT1
功能描述: Silicon Tuning Diodes
文件大小: 70.36KB    共8页
生产厂商: ONSEMI
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简  介:MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to 33 pF. http://onsemi.com 3 Cathode SOT–23 1 Anode High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance – 10% Complete Typical Design Curves 2 Cathode TO–92 1 Anode MARKING DIAGRAM 3 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25°C MMBV21xx Derate above 25°C @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range MV21xx LV22xx TJ Tstg Symbol VR IF PD 225 1.8 280 2.8 +150 –55 to +150 °C °C 1 Value 30 200 Unit Vdc mAdc mW mW/°C 1 2 XXX M TO–236AB, SOT–23 CASE 318–08 STYLE 8 XXX = Device Code* M = Date Code * See Table XX XXXX YWW DEVICE MARKING MMBV2101LT1 = M4G MMBV2103LT1 = 4H MMBV2105LT1 = 4U MMBV2107LT1 = 4W MMBV2108LT1 = 4X MMBV2109LT1 = 4J MV2101 = MV2101 MV2105 = MV2105 MV2109 = MV2109 LV2205 = LV2205 LV2209 = LV2209 2 TO–226AC, TO–92 CASE 182 STYLE 1 XX = Device Code Line 1* XXXX = Device Code Line 2* M = Date Code * See Table ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage……
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