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P06B03LVG

器件名称: P06B03LVG
功能描述: Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
文件大小: 150.65KB    共5页
生产厂商: ETC
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简  介:Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor SOP-8 Lead Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 50m[ ID -6A G :GATE D :DRAIN S :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±20 -6 -5 UNITS V V TC = 25 °C TC = 70 °C ID IDM A -30 2.5 1.3 W TC = 25 °C TC = 70 °C PD Tj, Tstg TL Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) -55 to 150 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID =- 5A VGS = -10V, ID = -6A -30 65 40 80 50 -30 -0.9 -1.5 -3 ±100 1 10 A m[ nA A V LIMITS UNIT MIN TYP MAX May-04-2005 1 Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor SO……
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器件名 功能描述 生产厂商
P06B03LVG Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor ETC
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