器件名称: P06B03LVG
功能描述: Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
文件大小: 150.65KB 共5页
简 介:Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor
SOP-8 Lead Free
PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 50m[ ID -6A G :GATE D :DRAIN S :SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
1
SYMBOL VDS VGS
LIMITS -30 ±20 -6 -5
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM
A
-30 2.5 1.3 W
TC = 25 °C TC = 70 °C
PD Tj, Tstg TL
Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
-55 to 150 275
°C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -4.5V, ID =- 5A VGS = -10V, ID = -6A -30 65 40 80 50 -30 -0.9 -1.5 -3 ±100 1 10 A m[ nA A V LIMITS UNIT MIN TYP MAX
May-04-2005 1
Logic Level Enhancement P06B03LVG NIKO-SEM Dual P-Channel Mode Field Effect Transistor
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