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P0120008P

器件名称: P0120008P
功能描述: 1W GaAs Power FET (Pb-Free Type)
文件大小: 833.14KB    共13页
生产厂商: EUDYNA
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简  介:P0120008P 1W GaAs Power FET (Pb-Free Type) Features Up to 2.7 GHz frequency band Beyond +28 dBm output power Up to +43dBm Output IP3 High Drain Efficiency 12dB Gain at 2.1GHz SOT-89 SMT Package Low Noise Figure Pin No. 1 2, 4 3 Technical Note SUMITOMO ELECTRIC Functional Diagram Function Input/Gate Ground Output/Drain 4 1 Number of devices 2 3 Container 7” Reel Anti-static Bag Ordering Information Part No P0120008P KP028J Description GaAs Power FET 2.11-2.17GHz Application Circuit 1000 1 Applications Wireless communication system Cellular, PCS, PHS, W-CDMA, WLAN Description P0120008P is a high performance GaAs MESFET housed in a low-cost SOT-89 package. Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our products catalog. Utilization of AuSn die attach has realized a low and stable thermal resistance. The lead frame is plated with Sn-Bi to make the device Pb-free. SEI’s long history of manufacturing has cultivated high device reliability. The estimated MTTF of the FET is longer than 15years at Tj of 150°C. You can see the details in Reliability and Quality Assurance. Absolute Maximum Ratings (@Tc=25°C) Parameter Symbol Value Units Drain-Source Voltage Vds 10 V Gate-Source Voltage Vgs -4 V Drain Current Ids Idss --RF Input Power (*) Pin 20 dBm (continuous) Power Dissipation……
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P0120008P 1W GaAs Power FET (Pb-Free Type) EUDYNA
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