器件名称: P0120008P
功能描述: 1W GaAs Power FET (Pb-Free Type)
文件大小: 833.14KB 共13页
简 介:P0120008P
1W GaAs Power FET (Pb-Free Type)
Features
Up to 2.7 GHz frequency band Beyond +28 dBm output power Up to +43dBm Output IP3 High Drain Efficiency 12dB Gain at 2.1GHz SOT-89 SMT Package Low Noise Figure
Pin No. 1 2, 4 3
Technical Note
SUMITOMO ELECTRIC Functional Diagram
Function Input/Gate Ground Output/Drain
4
1
Number of devices
2
3
Container 7” Reel Anti-static Bag
Ordering Information
Part No P0120008P KP028J Description GaAs Power FET 2.11-2.17GHz Application Circuit 1000 1
Applications
Wireless communication system Cellular, PCS, PHS, W-CDMA, WLAN
Description
P0120008P is a high performance GaAs MESFET housed in a low-cost SOT-89 package. Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our products catalog. Utilization of AuSn die attach has realized a low and stable thermal resistance. The lead frame is plated with Sn-Bi to make the device Pb-free. SEI’s long history of manufacturing has cultivated high device reliability. The estimated MTTF of the FET is longer than 15years at Tj of 150°C. You can see the details in Reliability and Quality Assurance.
Absolute Maximum Ratings (@Tc=25°C)
Parameter Symbol Value Units Drain-Source Voltage Vds 10 V Gate-Source Voltage Vgs -4 V Drain Current Ids Idss --RF Input Power (*) Pin 20 dBm (continuous) Power Dissipation……