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OD-669

器件名称: OD-669
功能描述: HIGH-POWER GaAlAs IRLED ILLUMINATOR
文件大小: 373.61KB    共2页
生产厂商: OPTODIODE
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简  介:HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 OD-669 LED CHIPS .140 R (REF. ONLY) .342 R .325 . 142 . 152 FEATURES Highest power output available 880nm peak emission Nine chips connected in series Very wide angle of emission Electrically isolated case EPOXY .084 .096 .030 .426 .432 .955 .965 1.225 1.255 .480 .350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF TEST CONDITIONS IF = 300mA IF = 5A IF = 50mA IF = 300mA IR = 10MA VR = 0V MIN 390 TYP 500 6500 880 120 30 11 3 3 80 MAX UNITS mW nm Deg nm Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 13.5 15 Volts Volts Msec Msec pF ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 400mA 5V 5A 6W Peak Forward Current (10Ms, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 -55°C to 100°C 60°C/W Typical 16°C/W Typical 100°C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to k……
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OD-669 HIGH-POWER GaAlAs IRLED ILLUMINATOR OPTODIODE
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