器件名称: OD-669
功能描述: HIGH-POWER GaAlAs IRLED ILLUMINATOR
文件大小: 373.61KB 共2页
简 介:HIGH-POWER GaAlAs IRLED ILLUMINATOR
.053 .067
OD-669
LED CHIPS .140 R (REF. ONLY) .342 R
.325
. 142 . 152
FEATURES Highest power output available 880nm peak emission Nine chips connected in series Very wide angle of emission Electrically isolated case
EPOXY
.084 .096 .030
.426 .432
.955 .965
1.225 1.255
.480
.350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF TEST CONDITIONS IF = 300mA IF = 5A IF = 50mA IF = 300mA IR = 10MA VR = 0V MIN 390 TYP 500 6500 880 120 30 11 3 3 80 MAX UNITS mW nm Deg nm
Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
5
13.5
15
Volts Volts Msec Msec pF
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1 400mA 5V 5A 6W
Peak Forward Current (10Ms, 400Hz)2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1
-55°C to 100°C 60°C/W Typical 16°C/W Typical 100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to k……