器件名称: OD-666
功能描述: HIGH-POWER GaAlAs IRLED ILLUMINATOR
文件大小: 372.94KB 共2页
简 介:HIGH-POWER GaAlAs IRLED ILLUMINATOR
.053 .067
OD-666
LED CHIPS .140 R (REF. ONLY) .342 R
.325
. 142 . 152
FEATURES High reliability LPE GaAlAs IRLEDs Ultra high power output 880nm peak emission Six chips connected in series Very wide angle of emission Electrically isolated case
EPOXY
.084 .096 .030
.426 .432
.955 .965
1.225 1.255
.480
.350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF TEST CONDITIONS IF = 300mA IF = 6A IF = 50mA IF = 300mA IR = 10MA VR = 0V MIN 300 TYP 330 5000 880 120 5 30 15 2 2 9 80 MAX UNITS mW nm Deg nm
Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
10
Volts Volts Msec Msec pF
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1 400mA 5V 6A 4W
Peak Forward Current (10Ms, 400Hz)2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1
-55°C to 100°C 60°C/W Typical 16°C/W Typical 100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulati……
