器件名称: OD-50L
功能描述: SUPER HIGH-POWER GaAlAs IR EMITTERS
文件大小: 389.42KB 共2页
简 介:SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES Ultra high power output Four wire bonds on die corners Very narrow optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches
OD-50L
ANODE (CASE) GLASS DOME .250 .262 .018
.357 .362 .100
.324 .332
.246 .254
.200 .031 .025 .500 CATHODE
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together.
.071 .095
.040 45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA IF = 500mA IR = 10MA VR = 0V MIN 40 TYP 50 600 500 880 80 7 MAX UNITS mW mW/sr nm nm
Reverse Breakdown Voltage, VR
5
1.65 30 90
2
Volts Volts Msec Msec pF
Deg
0.7 0.7
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1
1000mW 500mA 10A 5V
Peak Forward Current (10Ms, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2
-55°C to 100°C 150°C/W Typical 60°C/W Typical 100°C
1Heat transfer minimized by measuring in s……
