器件名称: OD-24X24-C
功能描述: HIGH-POWER GaAlAs EMITTER CHIPS
文件大小: 266.65KB 共1页
简 介:HIGH-POWER GaAlAs EMITTER CHIPS
.024 .005
.006 D 2 PLACES
OD-24x24-C
FEATURES High current capability 2 bond pads for uniform output
.024
Gold contacts for high reliability bonding
High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless otherwise specified.
EMITTING SURFACE
.005 .006 N P .006 .003 .005
RoHS
GOLD CONTACTS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 200mA IR = 10MA VR = 0V 5 MIN 7 TYP 10 880 1.6 30 60 80 MAX UNITS mW nm nm
Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Forward Voltage, VF Capacitance, C Rise Time Fall Time
Reverse Breakdown Voltage, VR
2
Volts Volts Msec Msec pF
0.7 0.7
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation Continuous Forward Current Reverse Voltage
400mW 200mA 5V 7A
Peak Forward Current (10Ms, 300 Hz) Storage and Operating Temperature Range Maximum Junction Temperature
-65°C to 150°C 150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com
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